| Numéro |
J. Phys. IV France
Volume 03, Numéro C7, Novembre 1993
The 3rd European Conference on Advanced Materials and ProcessesTroisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés |
|
|---|---|---|
| Page(s) | C7-1569 - C7-1572 | |
| DOI | https://doi.org/10.1051/jp4:19937245 | |
The 3rd European Conference on Advanced Materials and Processes
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
J. Phys. IV France 03 (1993) C7-1569-C7-1572
DOI: 10.1051/jp4:19937245
Polytechnical University of Valencia, Camino de Vera, 46071 Valencia, Spain
© EDP Sciences 1993
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
J. Phys. IV France 03 (1993) C7-1569-C7-1572
DOI: 10.1051/jp4:19937245
Structure of doped polyaniline - dielectric spectroscopy measurements
R. DIAZ CALLEJA and E.S. MATVEEVAPolytechnical University of Valencia, Camino de Vera, 46071 Valencia, Spain
Abstract
The role of doping reagents (residual water and acid anions) in determining the electric properties of a chemically synthesized polyaniline (PANI) was studied using a dielectric spectroscopy method. Dependencies of dielectric losses and susceptibility of PANI as the functions of temperature (-100 ÷ +100°C) and electric field frequency (0.3 ÷ 30000 Hz) were examined at it was shown that water acts as a doping impurity similar to acid anions. The model is proposed to explain the role of water in terms of adsorption of H2O molecules at nitrogen cites of PANI chain and their dissociation.
© EDP Sciences 1993