Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
J. Phys. IV France 03 (1993) C7-803-C7-806
Analyse de couches ou multicouches par SIMS : interprétation du profil aux interfacesM. AUCOUTURIER1, Ch. GRATTEPAIN2, A. TROMSON-CARLI2, M. BARBÉ2, G. COHEN-SOLAL2, Y. MARFAING2, F. CHEVRIER2, H. LE GALL2 and D. IMHOFF2
1 depuis janvier 1993 au Laboratoire de Métallurgie Structurale, 91405 Orsay, France
2 CNRS, Laboratoires de Meudon-Bellevue, 1 place A. Briand, 92195 Meudon, France
Secondary ion mass spectrometry (SIMS) is a well adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials, particularly concerning the more or less abrupt interfaces bounding those layers. It is known that the fiability and accuracy of the interface characterization may be affected by methodological factors, which alter the depth resolution such as: macroscopical or microscopical initial roughness of the substrate and/or of the layers, ion-induced roughening, effects of differential sputtering of the various elements, transitory stage of the primary ion beam implantation, ion beam induced accelerated diffusion, balistic mixing or segregation; etc... This communication describes several examples of SIMS analysis performed on metal multilayers (Co/Cu) and on epitaxial semiconductor layers (CdTe/GaAs), focussing the interest on the particular analytical problems raised by the initial roughness and the ion induced roughening effect. The interpretation of the measured profiles, the influence of analytical parameters (such as the nature of the primary ion beam, sputtering conditions, detected ion species), and the limitations of profilometry roughness measurements, are discussed. Solutions are proposed in order to improve the depth resolution of interface characterization, including a tentative modelization of roughness effect.
© EDP Sciences 1993