| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | C5-557 - C5-560 | |
| DOI | https://doi.org/10.1051/jphyscol:1995566 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-557-C5-560
DOI: 10.1051/jphyscol:1995566
1 Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, L62 3QF, U.K.
2 Institute of Surface Science and Technology, University of Loughborough, Loughborough, Leciestershire, LE11 3TU, U.K.
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-557-C5-560
DOI: 10.1051/jphyscol:1995566
A New Route to the Deposition of Al2O3 by MOCVD
A.C. Jones1, D.J. Houlton1, S.A. Rushworth1 and G.W. Critchlow21 Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, L62 3QF, U.K.
2 Institute of Surface Science and Technology, University of Loughborough, Loughborough, Leciestershire, LE11 3TU, U.K.
Abstract
Thin films of aluminium oxide, Al2O3, have been deposited by atmospheric pressure MOCVD using trimethylaluminium (Me3Al) and iso-propanol (Pr'OH) as precursors. The films were deposited over the temperature range 400-600°C and had growth rates of up to 67 Å min-1. Analysis by Auger electron spectroscopy showed that films deposited at 400°C were high purity with carbon contamination < 0.5 at %.
© EDP Sciences 1995