| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 259 - 262 | |
| DOI | https://doi.org/10.1051/jp4:2006132049 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 259-262
DOI: 10.1051/jp4:2006132049
1 The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
2 Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 259-262
DOI: 10.1051/jp4:2006132049
Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission study
Y. Yamashita1, S. Yamamoto1, K. Mukai1, J. Yoshinobu1, Y. Harada2, T. Tokushima2, Y. Takata2 and S. Shin1, 21 The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
2 Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
Abstract
We investigated effects of interface roughness on the local valence
electronic structures at SiO2/Si interface in order to clarify
the relation between interface structures and interface electronic
properties, by using soft X-ray absorption and emission
spectroscopy. For atomically smooth interface, the local valence
structures depend on intermediate oxidation states at the interface.
For atomically rough interface, on the other hand, the local valence
structures at the interface show amorphous-like electronic states
irrespective of the intermediated oxidation states.
© EDP Sciences 2006