| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 83 - 86 | |
| DOI | https://doi.org/10.1051/jp4:2006132016 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 83-86
DOI: 10.1051/jp4:2006132016
1 Institute of Space and Astronautical Science, JAXA, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan
2 Musashi Institute of Technology, 1-28-1 Tamazutzumi, Setagaya, Tokyo 158-8557, Japan
3 JASRI/SPring-8, 1-1-1 Kouto, Mikazuki, Sayo, Hyogo 679-5198, Japan
4 RIKEN/SRring-8, 1-1-1 Kouto, Mikazuki, Sayo, Hyogo 679-5148, Japan
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 83-86
DOI: 10.1051/jp4:2006132016
Valence charges for ultrathin SiO2 films formed on Si(100)
K. Hirose1, M. Kihara2, H. Okamoto2, H. Nohira2, E. Ikenaga3, Y. Takata4, K. Kobayashi3 and T. Hattori21 Institute of Space and Astronautical Science, JAXA, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan
2 Musashi Institute of Technology, 1-28-1 Tamazutzumi, Setagaya, Tokyo 158-8557, Japan
3 JASRI/SPring-8, 1-1-1 Kouto, Mikazuki, Sayo, Hyogo 679-5198, Japan
4 RIKEN/SRring-8, 1-1-1 Kouto, Mikazuki, Sayo, Hyogo 679-5148, Japan
Abstract
We measure the relative chemical shift between Si 1s and Si 2p,
E
E
, for 0.20-1.96-nm-thick
SiO2 films formed on Si substrates using high-resolution
high-energys x-ray radiation. It is found that E
E is independent of SiO2 film thickness
for films thicker than 1.0 nm, whereas it is smaller for films
thinner than 0.5 nm. The result, in conjunction with first
principles molecular orbital calculations, indicates that the
valence charge of the Si atom is larger for in ultrathin SiO2
films than in the thicker SiO2 films.
© EDP Sciences 2006