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Numéro
J. Phys. IV France
Volume 126, June 2005
Page(s) 89 - 92
DOI https://doi.org/10.1051/jp4:2005126019


J. Phys. IV France 126 (2005) 89-92
DOI: 10.1051/jp4:2005126019

LiNbO$_{\bf 3}$-based ferroelectric heterostructures

V. Bornand and Ph. Papet

Laboratoire de Physicochimie de la Matière Condensée, LPMC UMR CNRS 5617, UM II, Place E. Bataillon, C.C. 003, 34095 Montpellier Cedex 5, France


Abstract
We report the growth of LiNbO3 thin films onto In2O3:Sn-coated $\langle$111$\rangle$-Si substrates by standard radio-frequency sputtering. Multi-layer procedures, up to 4 successive deposits, have been developed that can subsequently improve the structural and macroscopic ferroelectric properties of such as-grown composite structures. The enhancement of polarization, as high as 40 $\mu $C.cm $^{\hbox{-}2}$ in 4 stacked layers, is attributed to c-oriented seed-layer-induced crystallization (self-polarization) and interfacial (migratory) polarization



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