| Numéro |
J. Phys. IV France
Volume 12, Numéro 4, June 2002
|
|
|---|---|---|
| Page(s) | 45 - 50 | |
| DOI | https://doi.org/10.1051/jp4:20020076 | |
J. Phys. IV France 12 (2002) Pr4-45
DOI: 10.1051/jp4:20020076
Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVD
K. WooNano-Materials Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
Abstract
Design, synthesis, and application of the new Ti precursors [ Ti(MPD)(MDOP)
2 and the binuclear precursor D (designated as D due to patent pending) derived from thereof] for MOCVD of TiO
2 thin film are reported. The new Ti precursors are stable in the air and moisture and thermally stable at vaporizing temperature.
The deposition rate of TiO
2 films with the new Ti precursor D was much higher than that with Ti(MPD)(tmhd)
2 or with Ti(Opr')
2(tmhd)2 at 375-475 °C. Therefore, the new Ti precursors are expected to yield BST thin films with constant composition in
Ba, Sr, and Ti utilizing the prevalent Ba and Sr precursors and current MOCVD technology. It is believed that the high deposition
rate of TiO
2 thin film is caused by the weaker bond strength of Ti-MDOP than Ti-tmhd.
© EDP Sciences 2002