| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-653 - Pr3-660 | |
| DOI | https://doi.org/10.1051/jp4:2001383 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-653-Pr3-660
DOI: 10.1051/jp4:2001383
Laboratoire des Matériaux et du Génie Physique, CNRS, École Nationale Supérieure de Physique de Grenoble, avenue de la Houille Blanche, BP. 46, 38402 Saint-Martin-d'Hères, France
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-653-Pr3-660
DOI: 10.1051/jp4:2001383
Deposition by an aerosol assisted MOCVD process of Eu or Er doped Y2O3-P2O5 thin films
J.L. Deschanvres and W. MeffreLaboratoire des Matériaux et du Génie Physique, CNRS, École Nationale Supérieure de Physique de Grenoble, avenue de la Houille Blanche, BP. 46, 38402 Saint-Martin-d'Hères, France
Abstract
The deposition of Er or Eu doped Y2O3-P2O5 thin films by an aerosol assisted MO-CVD atmospheric process is studied. 0.1 to 0.5 µm thick films were obtained on glass substrates in the temperature range 400°C-580°C. The rare earth luminescence is activated by post annealing. The properties of the films were discussed in function of the P2O5 content. For high annealing post-deposition treatments the films with less than 15 Mol % P2O5 tended to crystallise in the yttria phase. The YPO4 phase appeared around 50 Mol % P2O5 . Between these concentration limits the films appeared as a disordered composite Y-P-O phase and exhibited wide luminescence bands.
© EDP Sciences 2001