| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-1139 - Pr3-1145 | |
| DOI | https://doi.org/10.1051/jp4:20013143 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-1139-Pr3-1145
DOI: 10.1051/jp4:20013143
Sharp Laboratory of America, Inc. 5700 NW Pacific Rim Blvd., Camas, WA 98607, U.S.A.
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-1139-Pr3-1145
DOI: 10.1051/jp4:20013143
The development of MOCVD techniques for ferroelectric and dielectric thin film depositions
T. Li and S.T. HsuSharp Laboratory of America, Inc. 5700 NW Pacific Rim Blvd., Camas, WA 98607, U.S.A.
Abstract
MOCVD tools have been used for deposition of ferroelectric and dielectric thin films. In order to deposit high quality ferroelectric and dielectric thin films for FRAM, DRAM and logic device fabrication, the design of MOCVD tools, the MOCVD precursors, and the deposition process technologies have been extensively studied by researchers/engineers in several institutions. This paper reviewed the progress of MOCVD technologies for ferroelectric and dielectric thin film depositions with emphasis on the typical MOCVD technologies of PZT and BST thin films for FRAM application.
© EDP Sciences 2001