| Numéro |
J. Phys. IV France
Volume 04, Numéro C9, Novembre 1994
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
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| Page(s) | C9-89 - C9-95 | |
| DOI | https://doi.org/10.1051/jp4:1994911 | |
J. Phys. IV France 04 (1994) C9-89-C9-95
DOI: 10.1051/jp4:1994911
High resolution photoemission spectroscopy of flat and stepped non reconstructed H/Si(111) surfaces
A. Taleb-Ibrahimi1, R. Günther1, P. Dumas2, G . Indlekofer1, Y.J. Chabal3 and Y. Petroff41 LURE, Bat 209D, Centre Universitaire Paris-Sud, 91405 Orsay cedex, France
2 LASIR-CNRS, 2 rue Henri Dunant, 94320 Thiais, France
3 ATT Bell Laboratories, 600 Mountain Avenue, NJ 07974 Murray-Hill, U.S.A.
4 European Radiation Synchrotron Facility, 38000 Grenoble, France
Abstract
Chemically prepared, long range ordered, ideally hydrogen terminated Si(111) surfaces are model systems for the study of the electronic properties of silicon surfaces. The perfection of these surfaces leads to very sharp features in the high resolution photoemission spectra. New theoretical approaches based on first principle calculations agree with our experimental results, which allows a better understanding of the origin of the surfaces states at the HlSi(111) surfaces. The chemical treatment of vicinal Si(111) surfaces leads to dihydride or monohydride stepped surfaces. The comparison between flat and stepped surfaces show that long range order defects do not induce any important broadening of the spectral features. However additional surface states in the valence band spectra of the dihydride terminated surfaces are observed which are probably due to a local deformation at the steps.
© EDP Sciences 1994