| Numéro |
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
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| Page(s) | C3-535 - C3-540 | |
| DOI | https://doi.org/10.1051/jp4:1993374 | |
J. Phys. IV France 03 (1993) C3-535-C3-540
DOI: 10.1051/jp4:1993374
Chemical vapor deposition of hafnium carbide and hafnium nitride
G. EMIG1, G. SCHOCH2 and O. WORMER21 Institut für Techniche Chemie 1, Universität Erlangen-Nümberg, Egerlandstrasse 3, 8520 Erlangen, Germany
2 Institut für Chemische Technik der Universität Karlsruhe Kaiserstr. 12, 7500 Karlsruhe 1, Germany
Abstract
The paper describes alternative high- temperature coatings for carbon fiber reinforced carbon (CFC) and carbon fiber reinforced silicon carbide (C/SiC) comparing CVD of hahium carbide and hafnium nitride. Hafnium carbide and hahium nitride layers were obtained in a thermally- stimulated CVD reactor by reaction of hafnium tetrachloride, methan and addition of hydrogen. Thermodymnic modeling of the reactions HfCl4 + H2 + CH4 → HfCl4-x, C, HCl ; HfCl4 + H2 + N2 → HfN, HfCl4-x, HCl. shows the possibility of depositing a nearly carbon- free hafnium carbide layer, but HfM should be deposited at lower ternperatures without any solid byproduct. These theoretical calculations could be proved experimentally in a thermally activated CVD process.
© EDP Sciences 1993