| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|
|
|---|---|---|
| Page(s) | C2-823 - C2-830 | |
| DOI | https://doi.org/10.1051/jp4:1991297 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-823-C2-830
DOI: 10.1051/jp4:1991297
The Institute of Advanced Microelectronics, Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, IR-Belfast BT9 5AH, Northern Ireland
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-823-C2-830
DOI: 10.1051/jp4:1991297
GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD
F.H. RUDDELL, B.M. ARMSTRONG and H.S. GAMBLEThe Institute of Advanced Microelectronics, Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, IR-Belfast BT9 5AH, Northern Ireland
Abstract
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon carbide layers on [MATH] and [MATH] silicon substrates. Silane/propane gas chemistry has been employed at growth temperatures less than 1000°C. The growth mechanism for SiC may be considered as carbonation of silane species adsorbed on the wafer surface. Sufficient propane is present in the gas ambient to allow complete carbonation, with the carbon concentration in the film saturating at 50%.
© EDP Sciences 1991