| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-803 - C2-808 | |
| DOI | https://doi.org/10.1051/jp4:1991294 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-803-C2-808
DOI: 10.1051/jp4:1991294
1 Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
2 Hewlett-Packard Laboratories Japan, 100-3 Sakado, Takatsu-ku, Kawasaki 213, Japan
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-803-C2-808
DOI: 10.1051/jp4:1991294
CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD
J. MUROTA1, M. SAKURABA1, N. MIKOSHIBA2 and S. ONO11 Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
2 Hewlett-Packard Laboratories Japan, 100-3 Sakado, Takatsu-ku, Kawasaki 213, Japan
Abstract
The separation between surface adsorption and reaction of GeH4 on a Si substrate was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. The GeH4 partial pressure dependence of the deposited Ge thickness and relationship between atomic layer thickness and the shot to shot time interval have been investigated. Single atomic layer deposition per flash lamp light shot has been realized for some process conditions. From electron diffraction patterns, a single-crystallinity was found for most substrate orientations.
© EDP Sciences 1991