DEPOSITION OF Y-Ba-Cu-O-FILMS BY MO-CVD USING A NOVEL BARIUM PRECURSOR

C.I.M.A. SPEE; E.A. VAN DER ZOUWEN-ASSINK; K. TIMMER; A. MACKOR; H.A. MEINEMA

doi:doi:10.1051/jp4:1991236

Numéro		J. Phys. IV France Volume 02, Numéro C2, Septembre 1991 Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse


Page(s)		C2-295 - C2-302
DOI		https://doi.org/10.1051/jp4:1991236

Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-295-C2-302
DOI: 10.1051/jp4:1991236

DEPOSITION OF Y-Ba-Cu-O-FILMS BY MO-CVD USING A NOVEL BARIUM PRECURSOR

C.I.M.A. SPEE, E.A. VAN DER ZOUWEN-ASSINK, K. TIMMER, A. MACKOR and H.A. MEINEMA

TNO Industrial Research , P.O. Box 108, NL-3700 AC Zeist, The Netherlands

Abstract
Y-Ba-Cu-oxides are deposited by MOCVD in a hot-wall reactor using the well known copper- and yttrium-β-diketonate precursors, Cu(thd)₂ and Y(thd)₃, and the novel barium precursor, Ba(hfa)₂ tetraglyme. This novel barium precursor is thermally stable, non-hygroscopic and highly volatile. Depositions are performed on single-crystalline (100)-oriented MgO substrates. Depositions performed at 800°C and 900°C show smooth c-axis-oriented YBa₂Cu₃O_7-δ layers, with CuO precipitates. At 900°C also Y₂BaCuO₅ and barium oxide crystals are present.