J. Bodzenta, M. Dzida and T. Pustelny
J. Phys. IV France 137 (2006) 245-250
Investigation of thermal properties of SiC using photothermal methodJ. Bodzenta and A. Kazmierczak-Balata
Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
(Published online 23 December 2006)
A photothermal measurements were carried out for a few samples of silicon carbide (SiC). Thickness of the SiC plates was about 1 mm. Samples were highly inhomogeneous and differed in crystal structure. Experimental setup was typical for such investigation. The photothermal signal was measured using mirage detection. Experiment was performed for two configurations: probing beam was running over and under the sample surface. Analysis of experimental data was done according to one dimensional model of thermal wave propagation in multilayer system. Thermal diffusivities and optical absorption coefficients of the samples were determined based on multiparameter fitting procedure.
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