J. Phys. IV France
Volume 131, December 2005
Page(s) 359 - 360
Publié en ligne 18 janvier 2006
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 359-360

DOI: 10.1051/jp4:2005131093

Impurity-induced metal-insulator transition in quasi-one-dimensional metals TaSe3 and NbSe3

A.V. Zavalko and S.V. Zaitsev-Zotov

Institute of Radioengineering and Electronics of the RAS, Moscow 125009, Russia

A metal-insulator transition induced by impurity incorporation was observed in TaSe3 and NbSe3 samples. It was found out that the conduction of nanometer-scale thickness TaSe3 samples exhibits behavior expected for one-dimensional electron systems. Thick micrometer-scale NbSe3 samples with impurities introduced by thermal diffusion show a behavior similar to the one observed earlier in nanoscale samples

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