S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 223-224
Gate effect in charge-density wave nanowiresE. Slot, M.A. Holst and H.S.J. van der Zant
Kavli Institute of Nanoscience Delft, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
We have investigated transport characteristics of charge-density wave nanowires with a few hundred parallel chains. At temperatures below 50 K, these samples show power-law behavior in temperature and voltage, characteristic for one-dimensional transport. In this regime, gate dependent transport has been observed.
© EDP Sciences 2005