J. Phys. IV France
Volume 131, December 2005
Page(s) 125 - 127
Publié en ligne 18 janvier 2006
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 125-127

DOI: 10.1051/jp4:2005131029

Switching effects and sliding-induced charge transfer between the coexisting Q1 and Q2 charge density waves in NbSe3

A. Ayari1, R. Danneau1, 2, H. Requardt3, L. Ortega4, J.E. Lorenzo4, P. Monceau1, R. Currat2, S. Brazovskii5 and G. Grübel3

1  Centre de Recherches sur les Très Basses Températures, Laboratoire Associé à l'Université Joseph Fourier, BP. 166, 38042 Grenoble Cedex 9, France
2  Institut Laue Langevin, BP. 156, 38042 Grenoble Cedex 9, France
3  European Synchrotron Radiation Facility, BP. 220, 38043 Grenoble, France
4  Laboratoire de Cristallographie, CNRS, BP. 166, 38042 Grenoble Cedex 9, France
5  Laboratoire de Physique Théorique et des Modèles Statistiques, CNRS$/$Université Paris-Sud, 91405 Orsay Cedex, France

Using high-resolution x-ray scattering, in the temperature range 40 K <T<TP2, we report evidence for a sliding-charge transfer between the two electronic reservoirs corresponding to the two CDWs in NbSe3. We propose to use the same technique to correlate the switching behaviour which occurs in some NbSe3 samples below 40 K with the presence of jointly commensurate regions of both CDWs with the lattice.

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