J. Phys. IV France
Volume 129, October 2005
Page(s) 241 - 243

J. Phys. IV France 129 (2005) 241-243

DOI: 10.1051/jp4:2005129049

Investigations of the optical and thermal parameters of porous silicon layers with the two wavelength photoacoustic method

M. Malinski1, L. Bychto1, A. Patryn1, J. Gibkes2, B.K. Bein2 and J. Pelzl2

1  Faculty of Electronic Technical University of Koszalin, 2 Sniadeckich St. 75-328 Koszalin, Poland
2  Solid State Spectroscopy, Exp. Phys. III, Ruhr-University, 44780 Bochum, Germany

This paper presents the results of photoacoustic studies of porous silicon layers formed on silicon substrates with the method of constant current anodisation of c-Si in an aqueous solution of HF (50 wt %):H2O = 1:1. The aim of the study was to determine the thermal diffusivity of the porous silicon layers and their optical absorption coefficients with the photoacoustic method using two wavelengths of the exciting light for the generation of thermal waves and measurement of thermal and optical parameters.

© EDP Sciences 2005