J. Phys. IV France
Volume 126, June 2005
Page(s) 139 - 142

J. Phys. IV France 126 (2005) 139-142

DOI: 10.1051/jp4:2005126028

Piezoelectric and elastic properties of new layered ferroelectric-semiconductor materials of Sn$_{\bf 2}$P$_{\bf 2}$S$_{\bf 6}$ family

V. Samulionis1, J. Banys1 and Yu. Vysochanskii2

1  Physics Department of Vilnius University, Sauletekio 9/3, 10222 Vilnius, Lithuania
2  Institute of Solid State Physics and Chemistry of Uzhgorod University, Ukraine

In this contribution, we present review of elastic and piezoelectric properties of new polar layered materials of Sn2P2S6 family such as: CuInP2S6, CuInP2Se6, CuCrP2S6 and SnP2S6. These, recently obtained compounds, exhibit rich variety of piezoelectric properties, photosensitivity and ionic conductivity. Two investigation methods: resonance-antiresonance and ultrasonic pulse echo were used in order to measure the elastic and piezoelectric constants. The temperature dependences of longitudinal ultrasonic velocity and attenuation revealed clear anomalies near phase transitions in these layered materials. We observed large elastic nonlinearity in CuInP2S6 samples across layers in c-direction. The elastic nonlinnearity along layerss was much smaller. By direct pulse-echo experiments in low temperature phases, it was shown that the thin plates of CuInP2S6, CuCrP2S6, CuInP2Se6 and SnP2S6 layered compounds could effectively excite and detect ultrasonic waves.

© EDP Sciences 2005