J. Phys. IV France
Volume 125, June 2005
Page(s) 447 - 449

J. Phys. IV France 125 (2005) 447-449

DOI: 10.1051/jp4:2005125105

Photocarrier radiometry of ion implanted semiconductors

D. Shaughnessy, B. Li, A. Mandelis, J. Batista and J. Tolev

Center for Advanced Diffusion-Wave Technologies (CADIFT), Dept. of Mechanical and Industrial Engineering, Univ. of Toronto, 5 King's College Road, Toronto, Ontario, M5S 3G8, Canada

The dependence of the photocarrier radiometric (PCR) signal on ion implant dose in Si is reported. The results show almost entirely monotonic behavior over a large range of industrially relevant fluences (1x1010 to 1x1016 cm-2) for B+, As+, P+, and BF2+ implanted in Si wafers at various energies. In addition, increasing the absorption coefficient of the excitation source is shown to improve the sensitivity of the PCR amplitude to dose. A three-dimensional three-layer model is used to provide a quantitative understanding of the PCR response of ion-implanted semiconductors. Good agreement between theoretically calculated PCR signal dependence on dose and experimental results is obtained.

© EDP Sciences 2005