J. Phys. IV France
Volume 125, June 2005
Page(s) 427 - 429

J. Phys. IV France 125 (2005) 427-429

DOI: 10.1051/jp4:2005125100

Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method

P.M. Nikolic1, D. Vasiljevic-Radovic2, K.T. Radulovic2, A.I. Bojicic1, D. Lukovic1, S. Savic1, V. Blagojevic3, S. Vujatovic1, L. Lukic4 and D. Urosevic5

1  Institute of Technical Sciences of the Serbian Academy of Sciences and Arts, Knez Mihailova 35/IV, 11000 Belgrade, Serbia
2  IHTM - Institute of Microelectronic Technologies and Single Crystals, Njegoseva 12, 11000 Belgrade, Serbia
3  Faculty of Electrical Engineering of Belgrade University, Kralja Aleksandra 73, 11000 Belgrade, Serbia
4  IRITEL, Batajnicki put 23, 11000 Belgrade, Serbia
5  Mathematical Institute of the Serbian Academy of Sciences and Arts, Knez Mihailova 35/II, 11000 Belgrade, Serbia

Anisotropy in thermal and electronic properties for two directions of thermal wave propagation in the GaSe single crystal was investigated using photoacoustic (PA) frequency transmission techniques. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the c-axis ( $\vec{E}\perp c$) and then parallel to it ( $\vec{E}\Vert c$). An obvious difference in the PA phase and amplitude spectra of the same sample for these two cases was shown. The thermal diffusivity DT obtained by the fitting procedure for these two orientations of the electric field were calculated as $D_{T/\!/}=0.46\times10^{-5}$m2/s and $D_{T\perp}=0.62\times10^{-6}$m2/s eg. Their ratio is about 7.4. The electronic transport parameters are also given. The carrier diffusion coefficient D$_{\rm II}$ is $0.53\times10^{-3}$ m2/s and D$_{\perp}$ is $0.3\times10^{-3}$ m2/s.

© EDP Sciences 2005