J. Phys. IV France
Volume 119, November 2004
Page(s) 147 - 148

J. Phys. IV France 119 (2004) 147-148

DOI: 10.1051/jp4:2004119030

Sb-based VCSEL operating at 2.3 $\mu$m in continuous wave regime up to 350 K with a TEM 00 beam

L. Cerutti, A. Garnache, A.Ouvrard and F. Genty

Centre d'Électronique et de Micro-optoélectronique de Montpellier (CEM2), UMR CNRS 5507, Case 067, Université de Montpellier-II, 34 095 Montpellier Cedex 05, France

we report on the growth by MBE and characterization of a laser diode pumped Vertical Cavity Surface Emitting Laser, where the optical cavity is formed by the Bragg mirror, an air gap and a dielectric concave mirror. The laser operates at 2.43 $\mu$m in continuous wave regime up to 350K with a circular TEM 00 beam.

© EDP Sciences 2004