The model of a thin semiconductor layer on a thermally thick semiconductor backing for the photoacoustic use

M. Maliński; L. Bychto; J.L. Nzodoum Fotsing; K. Junge; A. Patryn

doi:doi:10.1051/jp4:2004117006

Numéro		J. Phys. IV France Volume 117, October 2004


Page(s)		29 - 40
DOI		https://doi.org/10.1051/jp4:2004117006

J. Phys. IV France 117 (2004) 29-40
DOI: 10.1051/jp4:2004117006

The model of a thin semiconductor layer on a thermally thick semiconductor backing for the photoacoustic use

M. Malinski¹, L. Bychto¹, J.L. Nzodoum Fotsing², K. Junge² and A. Patryn¹

¹ Technical University of Koszalin, 75-328 Koszalin, Poland
² Solid State Spectroscopy Exp.Phys. III Ruhr-University, 44780 Bochum, Germany

Abstract
In this paper the thermal model of a thin semitransparent layer on a semitransparent thermally thick backing material is presented. The formula for the temperature of the front surface of the structure that was derived in this paper allowed the computations of the photoacoustic amplitude and phase spectra of a thin GaAs layer on a silicon substrate and a porous silicon layer on a silicon substrate. This formula is a useful tool in the field of the photoacoustic spectroscopy of thin layers.