J. Phys. IV France
Volume 115, June 2004
Page(s) 59 - 66

J. Phys. IV France
115 (2004) 59
DOI: 10.1051/jp4:2004115007

Characterization and modeling of domain engineered relaxor ferroelectric single crystals

A. Malbec, T. Liu and C.S. Lynch

The GWW School of Mechanical Engineering, The Georgia Institute of Technology, Atlanta, GA 30332-0405, USA

This work describes a measurement and modeling effort directed at improving our understanding of relaxor single crystals of PZN-xPT and PMN-xPT. Results include electromechanical characterization, crystal variant modeling, and modeling of field induced phase transitions. Key results include reducing high cycle fatigue by elimination of sharp corners on bulk specimens and development of engineered domain states other than [001] in rhombohedral compositions. The latter development coupled with the modeling work has led to identification and characterization of the [001] cut with properties optimized for d 31 and d 32 applications.

© EDP Sciences 2004