J. Phys. IV France 114 (2004) 157
Pressure-induced Fermi surface change in quasi-one-dimensional conductor -(ET)(TCNQ)S. Yasuzuka1, 2, D. Graf3, E.S. Choi3, J.S. Brooks3, T. Terashima2, T. Konoike2, K. Enomoto2, M. Nishimura2, H.M. Yamamoto4, R. Kato4 and S. Uji2
1 Division of Physics, Hokkaido University, Sapporo 060-0810, Japan
2 National Institute for Materials Science, Tsukuba 305-0003, Japan
3 Florida State University/National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
4 Condensed Molecular Materials Lab., RIKEN, JST-CREST, Saitama 351-0198, Japan
We report results of the magnetoresistance measurements of -(ET)(TCNQ) under a pressure of 7 kbar. The resistance is found to show a large peak at 37 K suggesting some phase transition. When the field applied perpendicular to the conducting layers, a resistance hump appears at 12 K. The Shubnikov-de Haas oscillation with a high frequency of 4183 T is observed below 1 K, whose cross sectional area corresponds to about 30% of the first Brillouin zone. The effective mass is estimated to be 4.5 m0. These results, which are quite different from the ambient e data, show a drastic change of the electronic state under 7 kbar.
© EDP Sciences 2004