Numéro |
J. Phys. IV France
Volume 112, October 2003
|
|
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Page(s) | 917 - 920 | |
DOI | https://doi.org/10.1051/jp4:20031030 |
J. Phys. IV France 112 (2003) 917
DOI: 10.1051/jp4:20031030
Martensitic transformation of Ni-Mn-Ga (C, Si, Ge) Heusler alloys
X. Lu, X. Chen, L. Qiu and Z. QinDepartment of Materials Science and Engineering, Dalian Railway Institute, Dalian 116028, China
Abstract
The effect of the IV elements C, Si, Ge on the martensitic transformation of Ni-Mn-Ga Heusler alloys has been examine by the
measurement of resistivity and thermal expansion. There are two kinds of martensitic transformations for Ni-Mn-Ga ternary
Heusler alloys below the T
. The first one shows typical cubic-tetragonal martensitic transformation characteristic. The second one may correspond to
a change in the periodicity of commensurate modulated martensite lattice. The Si and Ge additions obviously decrease the martensitic
transformation temperature of the alloys and depress the second phase transformation completely above the 77K. An increasing
of C and lowering of Ga content increases the second martensitic transformation temperatures more quickly than that of the
first transformation.
© EDP Sciences 2003