J. Phys. IV France
Volume 104, March 2003
Page(s) 567 - 570

J. Phys. IV France
104 (2003) 567
DOI: 10.1051/jp4:20030145

Phase contrast X-ray microscopy at 4 keV photon energy with 60 nm resolution

U. Neuhäusler1, G. Schneider2, W. Ludwig1 and D. Hambach3

1  X-Ray MicroscopyBeamline ID2, European Synchrotron Radiation Facility, ESRF, BP. 220, 38043 Grenob/e cedex, France
2  Center forX-Ray Optics, Lawrence Berkeley National Laboratory, S Cyclotron Road, Berkeley, CA 94720, U.S.A.
3  Institut für Röntgenphysik, Georg-August-Universität, Geiststrasse 11, 37073 Göttingen, Germany

X-ray microscopy in the multi-keV photon energy range offers unique possibilities to study relatively thick samples with high spatial resolution. When employing a high N. A. condenser zone plate for sample illumination in combination with a high resolution micro zone plate objective tens, a spatial resolution of currently 60 nm is achieved. We report here on phase contrast X-ray microscopy at 4 keV photon energy on copper interconnect structures, buried in silicon dioxide. While the amplitude contrast in those samples is only 7%, negative as well as positive phase contrast were demonstrated using 2.2  $\mu$m and 0.7  $\mu$m high Nickel phase rings with a contrast of 30% and 39%, respectively.

© EDP Sciences 2003