J. Phys. IV France
Volume 104, March 2003
Page(s) 203 - 205

J. Phys. IV France
104 (2003) 203
DOI: 10.1051/jp4:200300061

Fast control unit for electron beam lithography Systems especially for X-ray and EUV optics

S. Rudolph, S. Heim, D. Rudolph and G. Schmahl

Institute for X-Ray Physics, Georg-August-Universität Göttingen, Geiststrasse 11, 37073 Göttingen, Germany

A new control unit for electron beam lithography has been designed and built with a maximum resolution of 217 pixel in x and y each. With this unit two modes are available, a scanning and a true polarcoordinate mode for structures which can be described as parametrized functions. The hardware design can be described as two matrices with the dimension $2^{17} \times$ n i,x and $2^{17} \times$ n i,y. n i,x and n i,y comprise the necessary parameters for exposure which are not necessarily equal for x and y direction. Parameters are among others the beam status (beam on or off), the dwell time, defocus, etc. These matrices are realized by EPROMs, configurated via an external computer. In working condition they are read out by two digital 17 bit counters which are operated independently in scanning mode or synchronously in polarcoordinate mode for parametrized structures.

© EDP Sciences 2003