Numéro |
J. Phys. IV France
Volume 104, March 2003
|
|
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Page(s) | 203 - 205 | |
DOI | https://doi.org/10.1051/jp4:200300061 |
J. Phys. IV France 104 (2003) 203
DOI: 10.1051/jp4:200300061
Fast control unit for electron beam lithography Systems especially for X-ray and EUV optics
S. Rudolph, S. Heim, D. Rudolph and G. SchmahlInstitute for X-Ray Physics, Georg-August-Universität Göttingen, Geiststrasse 11, 37073 Göttingen, Germany
Abstract
A new control unit for electron beam lithography has been designed and built
with a maximum resolution of
217 pixel in
x and
y each. With this unit two modes are
available, a scanning and a true polarcoordinate mode for structures which can be described
as parametrized functions. The hardware design can be described as two matrices with
the dimension
n
i,x and
n
i,y. n
i,x and n
i,y
comprise the necessary parameters
for exposure which are not necessarily equal for
x and
y direction. Parameters are among
others the beam status (beam on or off), the dwell time, defocus, etc. These matrices are
realized by EPROMs, configurated via an external computer. In working condition they
are read out by two digital 17 bit counters which are operated independently in scanning
mode or synchronously in polarcoordinate mode for parametrized structures.
© EDP Sciences 2003