Numéro
J. Phys. IV France
Volume 12, Numéro 9, November 2002
Page(s) 129 - 130
DOI http://dx.doi.org/10.1051/jp4:20020378


J. Phys. IV France
12 (2002) Pr9-129
DOI: 10.1051/jp4:20020378

Currents conversion in the submicron CDW-N-CDW structures

S.G. Zybtsev1 and V.N. Timofeev2

1  Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2  A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Moscow, Russia


Abstract
Using selective area irradiation by electrons with high energies the submicron CDW-N -CDW heterostructures were obtained on NbSe, single crystals. In sliding CDW regime an excess voltage appears on this narrow normal region that depends neither on a sample, nor on the length of the irradiated area l and represents threshold phase slip (PS) voltage V $_{\rm ps}$, induced on CW-N boundaries. The obtained V $_{\rm ps}$, data for lower CDW strongly differ (5-6 times higher) from the known results for NbSe, obtained in the conventional configuration. This suggests that CDW-N boundaries created by irradiation represent the "ideal" face contacts introducing small perturbations. At low temperature (T <7 K) and at l <0.5  $\mu$m we observe narrow ( -0.5 mV width) dynamic conductance peak at zero bias voltage. The peak amplitude grows with decreasing temperature and length of the irradiated area.



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