Numéro
J. Phys. IV France
Volume 12, Numéro 9, November 2002
Page(s) 119 - 122
DOI http://dx.doi.org/10.1051/jp4:20020375


J. Phys. IV France
12 (2002) Pr9-119
DOI: 10.1051/jp4:20020375

Point-contact spectroscopy probing the NbSe 3 CDW gap in different crystallographic orientations

A.A. Sinchenko1 and P. Monceau2

1  Moscow State Engineering Physical Institute, Moscow, Russia
2  Centre de Recherches sur les Très Basses Temperatures, CNRS, Grenoble, France


Abstract
We have measured the differential current-voltage characteristics of normal metal-NbSe 3 direct point contacts (without insulating barrier) formed along different crystallographic orientations under applied magnetic field with different orientations. At low temperature two energy gaps, $\Delta_{p1}$ and $\Delta_{p2}$, corresponding to the high and the low-temperature CDW were observed simultaneously as a singulanty of the excess resistance which is attributed to an analog of Andreev reflection, in which the incident electron reflects on the Peierls energy gap barriers with its charge unchanged. An applied magnetic field up to 8.5 T does not lead to a change in the density of states and in the Peierls energy gaps, suggesting that the large magnetoresistance observed in NbSe 3 might not result from the change in the CDW order parameter with magnetic field but rather from the increase of scattering of non-condensed to CDW carriers.



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