Numéro
J. Phys. IV France
Volume 12, Numéro 9, November 2002
Page(s) 115 - 118
DOI http://dx.doi.org/10.1051/jp4:20020374


J. Phys. IV France
12 (2002) Pr9-115
DOI: 10.1051/jp4:20020374

Transport properties of N bSe3 crystals with nanometer-scale transverse dimensions

S.V. Zaitsev-Zotov1, E. Slot2 and H.S.J. van der Zant2

1  Institute of Radioengineering and Electronics of Russian Academy of Sciences, Mokhovaya 11, 101999 Moscow, Russia
2  Department of Applied Sciences and DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands


Abstract
A systematic study of the finite-size effects in transport properties of NbSe 3 crystals has been undertaken in crystals having room-temperature unit length resistance up to 10 $^5~\Omega \mu$m. A substantial modification of the shape of the resistance vs. temperature curves, R(T), is observed for the thinnest crystals. The measurements of the resistance and the Shapiro steps show that the effective cross-section area responsible for single-electron and CDW transport is substantially below a sample cross-section area defined by atomic force and scanning electron microscopy. A time evolution of the R(T) is found. It is shown that the observed time evolution is similar to one resulted from breaking of the chains. Thus for thinnest samples, the contribution from a * and c-axis transport should be taken into account.



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