Numéro
J. Phys. IV France
Volume 12, Numéro 9, November 2002
Page(s) 109 - 112
DOI http://dx.doi.org/10.1051/jp4:20020372


J. Phys. IV France
12 (2002) Pr9-109
DOI: 10.1051/jp4:20020372

Experimental evidence of interlayer coherent tunneling in NbSe 3

Yu.I. Latyshev1, L.N. Bulaevskii2, T. Kawae3, A. Ayari4 and P. Monceau4

1  Institute o Radio-Engineering and Electronics RAS, Mokhovaya 11-7, GSP-9, 101999 Moscow, Russia
2  Los Alamos National Laboratory, Los Alamos, NM 87545, U.S.A.
3  Research Institute of Electonical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
4  Centre de Recherches sur les Très Basses Températures, CNRS, BP. 166, 38042 Grenoble cedex 9, France


Abstract
Zero bias conductance peak (ZBCP) and gap features have been studied on tunneling interlayer spectra of the micron-sized NbSe 3 stacks of high quality. We show that temperature dependence and the shape of the ZBCP is self-consistently described by Bulaevskii theory of coherent interlayer tunneling of pocket carriers.



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