J. Phys. IV France 11 (2001) Pr11-133-Pr11-137
SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodesJ.R. Duclère1, M. Guilloux-Viry1, A. Perrin1, A. Dauscher2, S. Weber2, B. Lenoir2, C. Soyer3, E. Cattan3 and D. Remiens3
1 LCSIM, UMR 6511 du CNRS, Université de Rennes 1, Institut de Chimie de Rennes, Campus de Beaulieu, 35042 Rennes cedex, France
2 LPM, UMR 7556 du CNRS-UHP-INPL, École des Mines de Nancy, Parc de Saurupt, 54042 Nancy, France
3 MlMM Department, ZI du Champ de l'Abbesse, 59600 Maubeuge, France
SBN thin films have been deposited by pulsed laser deposition on polycrystalline Pt/Ti/SiO2/Si (Pt/Si) substrates and on Pt epitaxied on (100)MgO, (100) or (110)SrTiO3 single crystals. On Pt/Si substrates, SBN polycrystalline film were obtained in situ at 700°C. X-ray diffraction (XRD) patterns indicate that these films exhibit some (001) preferential orientation and also reveal some formation of secondary phases which can be due to reaction between fîlm and substrate as suggested by Secondary Ions Mass Spectrometry (SIMS) results. Alternatively, in view of ferroelectric investigations, SBN films were deposited at lower temperature (typically 400°C) and then annealed at 750°C under air in order to allow better grain growth and to overcome this (001) preferential orientation that is deleterious for ferroelectric performances in such a structure. On single crystalline substrates, Pt bottom electrodes were deposited by d.c. sputtering at ~ 450° C. Their epitaxial growth was confirmed by Electron Channeling Pattern (ECP) and XRD in θ/2θ and φ-scan modes. SBN films grown on (l00)Pt/(l00)SrTiO3 and (100)Pt(l00)MgO are (001) oriented and in-plane rotated by 45° with respect to the substrate while SBN films grown on (100)Pt/(110)SrTiO3 are (116) oriented as shown by θ/2θ and --scans. SIMS also reveals interdiffusion. Finally, the morphologies of these various films (Scanning Electron Microscopy) have been compared.
© EDP Sciences 2001