J. Phys. IV France 11 (2001) Pr11-97-Pr11-101
Anisotropic resistance change of La0.7Sr0.3MnO3 thin films effected by in-plane axial strainC. Simkevicius1, V. Stankevic1, S. Balevicius1, A. Abrutis2, V. Plausinaitiene2, L. Dapkus1, B. Vengalis1 and N. Zurauskiene1
1 Semiconductor Physics Institute, Gostauto 11, 2600 Vilnius, Lithuania
2 Vilnius University, Department of General and Inorganic Chemistry, Naugarduko 24, 2600 Vilnius, Lithuania
Thin films of La0.7Sr0.3MnO3 grown on (001) NdGaO3 substrate using vertical hot wall Injection CVD reactor were investigated by means of standard fish-bellied beam inducing uniaxial compressive (or tensile) strain of the films. The measurements were carried out in current direction both parallel (longitudinal resistance R1) and perpendicular (transversal resistance R1) to the strain direction. The compression along , ,  and  directions on films having 8 nm thickness showed the strong anisotropy of strain induced resistance change. The compression along  and [l10] directions caused the decrease of the film resistance while the compression along  and  directions increased this resistance. The maximum obtained relative resistance change was about 27% at strain 0.005. This effect appeared in both longitudinal and transversal directions of the electric current. The experimental results are discussed in terms of external strain influence on anisotropically strained La0.7Sr0.3 MnO3 film lattice produced as a result of large mismatch between substrate and film lattice constants.
© EDP Sciences 2001