J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-211 - Pr10-212
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-211-Pr10-212

DOI: 10.1051/jp4:19991053

Magnetic field dependence of the SDW transition in (TMTSF)2ClO4

N. Matsunaga1, 2, A. Briggs1, A. Ishikawa2, K. Nomura2, S. Takasaki3, J. Yamada3, S. Nakatsuji3 and H. Anzai3

1  CRTBT-CNRS, Laboratoire associé à l'UJF, BP. 166, 38042 Grenoble cedex 9, France
2  Division of Physics, Hokkaido University, Sapporo 060-0810, Japan
3  Department of Material Science, Himeji Institute of Technology, Kamigohri, Hyogo 678-1297, Japan

The magnetic field dependence of the SDW transition in (TMTSF)2ClO4 for various anion quenching rates has been measured up to 27T, with the field parallel to the lowest conductivity direction c*. The SDW transition temperature TSDW decreases with decreasing quenching rate and the rate of increase with magnetic field increases with decreasing TSDW. For quenched (TMTSF)2ClO4, TSDW increases from 4.5K in zero field up to 8.4K at 27T. As predicted, a quadratic behavior is observed below 18T, followed by a saturation behavior. These results are consistent with the prediction of the mean-field theory. For the perfect nesting case, TSDW is estimated as TSDWo=13.5K. This means that the SDW phase of quenched (TMTSF)2ClO4 is strongly suppressed by the two-dimensionality of the system. In the intermediate cooling state in which there is no SDW phase in zero field, TSDW shows a quadratic behavior above 12T and there is no saturation even at 27T, which is different to the field induced SDW phase of the relaxed state. This may be attributed to the difference of the anion gap structure.

© EDP Sciences 1999