J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-207 - Pr10-209
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-207-Pr10-209

DOI: 10.1051/jp4:19991052

Pressure effects on the CDW transitions and magnetoresistances in NbSe3

S. Yasuzuka1, Y. Okajima1, S. Tanda1, K. Yamaya1, N. Takeshita2 and N. Môri2

1  Department of Applied Physics, Hokkaido University, 060-8628 Sapporo, Japan
2  ISSP, The University of Tokyo, Minato-ku, 106-8666 Tokyo, Japan

Magnetoresistance (MR) of NbSe3 has been measured between 2 K alid 150 K under high pressure including critical pressures (Pc2 and Pc1) where the lower and upper CDW phase are totally suppressed by pressure respectively. At ambient pressure, a large MR (LMR) is observed just below Tc2 but no MR is detected above Tc2. Under high pressure, in addition to the LMR, we observe newly a MR above Tc2. Here we call il the pressure-induced MR (PIMR). The LMR always appears as long as the lower CDW phase exists but it rapidly disappears above Pc2. Similarly, the PIMR disappears above Pc1. Furthermore, no anomalies associated with the field-induced CDW are observed within our experimental limits. From these findings, we claim that the LMR and PIMR are due to normal carriers in small pockets created by a pressure-dependent imperfect nesting of the Fermi surface in the CDW transitions.

© EDP Sciences 1999