J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-165 - Pr10-169
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-165-Pr10-169

DOI: 10.1051/jp4:19991042

CDW transport in mesoscopic structures of submicroand nanometer scale

Yu. I. Latyshev1, 2, 3, P . Monceau4, O. Laborde4, B. Pennetier4, V. Pavlenko1 and T. Yamashita1, 2

1  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-85777, Japan
2  CREST, Japan Science and Technology Corporation (JST), Japan
3  Institute of Radio-Engineering and Electronics RAS, Mokhovaya 11, Moscow 103907, Russia
4  Centre de Recherches sur les Très Basses Températures, CNRS, BP. 166, 38042 Grenoble cedex 9, France

We have studied the CDW transport in different mesoscopic structures with size variation from the micro to the nanometer scale. The structures of three types, all based on thin NbSe3 crystals, were investigated : 1) periodic system of antidots (holes) with size and spacing variation from micron to the submicron scale, 2) randomly distributed columnar defects (CDs) of various concentration with diameter of 16 nm, 3) short bridges across the conducting bc-planes with the length of 30-50 nm. We report here a number of new features of the CDW transport in mesostructures, in particular, non-linear properties of submicron network, the experimental evidence of quantum interference effect of sliding CDW on CDs threaded by magnetic flux, zero bias conductance peak in the a*-axis transport.

© EDP Sciences 1999