J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-47 - Pr10-48
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-47-Pr10-48

DOI: 10.1051/jp4:19991011

Complex dielectric response of the CDW ground state in o-TaS3

D. Staresinic1, K. Biljakovic1, W. Bruetting2, K. Hosseini2 and S. Zaitsev-Zotov3

1  Institute of Physics, P.O. Box 304, 10001 Zagreb, Croatia
2  Physikal Institut, Uni. Bayreuth, 95440 Bayreuth, Germany
3  Institute of Radioengineering and Electronics, Russian Academy of Sciences, Mokhovaya 11, 103907 Moscow, Russia

We report the temperature evolution of the low-frequency (f<10 MHz) dielectric response of the CDW material orthorombic TaS3 between 150 K and 10 K. There are two distinctive processes observed bellow and above 50 K that define different ground states of CDW. The first one due to the weakly pinned elastic CDW freezes at about 50 K and a second one due to the dynamics of topological defects of frozen CDW appears below. Similar change of regime is observed in linear conductivity in the same temperature range. This second process we detect also in thermally stimulated discharge, an alternative technique of low frequency dielectric measurement, which allows access to effective frequencies down to 0.1 mHz.

© EDP Sciences 1999