J. Phys. IV France 09 (1999) Pr8-689-Pr8-695
Growth of oxide buffer layers and YBCO films on various substrates by pulsed injection CVDA. Abrutis1, V. Plausinaitiene1, A. Teiserskis1, V. Kubilius1, Z. Saltyte1, J.P. Sénateur2 and L. Dapkus3
1 Vilnius University, Department of General and Inorganic Chemistry, Naugarduko 24, 2006 Vilnius, Lithuania
2 Laboratoire des Matériaux et du Génie Physique, INPG-ENSPG, UMR 5628 du CNRS, BP. 46, 38402 Saint-Martin-d'Hères, France
3 Semiconductor Physics Institute, Gostauto 11, 2600 Vilnius, Lithuania
Bilayers composed from a YSZ or CeO2 buffer layer and a YBCO film were in situ grown on monocrystalline sapphire, MgO, silicon, vicinally polished sapphire and MgO substrates by single source pulsed injection CVD. Zr, Ce, Y, Ba and Cu 2,2,6,6-tetramethyl-3,5-heptandionates dissolved in organic solvent were used for film deposition. CeO2/YBCO bilayers on sapphire were grown epitaxially and exhibited critical current densities up to 106 A/cm2 at 77 K. YSZ and CeO2 buffer layers on MgO substrates did not improved the properties of YBCO layers compared with YBCO films deposited directly on MgO surface ; however, interesting microstructural properties of these heterostructures were found. Homogeneous YSZ films were also deposited on large Si substrates (3 inches in diameter).
© EDP Sciences 1999