J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-173 - Pr8-180
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-173-Pr8-180

DOI: 10.1051/jp4:1999821

Chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) : Experience and simulation

P. Barathieu1, B. Caussat2, E. Scheid3, D. Jaume1 and J.P. Couderc2

1  Motorola Semiconducteurs SA, Le Mirail, BP. 1029, 31023 Toulouse cedex, France
2  Laboratoire de Génie Chimique, UMR 5503 du CNRS, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
3  Laboratoire d'Analyse et d'Architecture des Systèmes, UPR 8001 du CNRS, 7 avenue du Colonel Roche, 31077 Toulouse cedex, France

SIPOS films deposited from silane and nitrous oxide find extensive applications in power components manufacturing. The deposition rate and the oxygen concentration of the SIPOS layers have been experimentally measured for various deposition temperatures and gas feeding compositions. In a second step, a theoretical model has heen developed, based on the general organization of the CVD2 software. Both hydrodynamics and mass transfer phenomena have been taken into account. A complete chemical mechanism, describing the chemistry in the gas phase inside the reactor as well as the heterogeneous reactions on the solid surfaces, has been built and several unknown kinetic constants have been determined. Simulation is in good agreement with the experience. Many information on phenomena occurring into the reactor can be obtained by the use of mathematical modeling and in particular, explanations for the radial heterogeneities on wafer and between wafers are proposed.

© EDP Sciences 1999