J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-1179 - Pr8-1186
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-1179-Pr8-1186

DOI: 10.1051/jp4:19998147

Application of Raman spectrometry for the characterization of complex oxide thin films grown by MOCVD

B. Güttler1, O.Yu. Gorbenko2, M.A. Novozhilov2, S.V. Samoilenkov2, V.A. Amelichev2, G. Wahl3 and H.W. Zandbergen4

1  PTB, Bundesallee 100, 38116 Braunschweig, Germany
2  Chemistry Department, Moscow State University, 119899 Moscow, Russia
3  IOPW, TU Braunschweig, 38108 Braunschweig, Germany
4  National Center for HREM, TU Delft, Rotterdamseweg 137, AL Delft, The Netherlands

Thin epitaxial films of complex oxide materials including superconductors RBa2Cu3O7-δ (R=Ho,Lu), CMR manganites R1-xAxMnO3 (R = La, Pr, Nd ; A = Ca, Sr), conducting perovskites La0.5Sr0.5CoO3-LaNiO3 were prepared by aerosol and flash MOCVD. The application of Raman spectrometry was found to be an unique possibility for a non-destructive control of the oxygen content of the material in films (including the analysis of the oxygen isotope content) and the appearance of secondary phases. In particular cases, the phase analysis can be carried out for very small amounts of impurity phase exceeding the detection limit provided by other techniques, such as X-ray diffraction or EDX element analysis. Advances in the measurement technique have expanded facilities of Raman spectrometry to the analysis of perovskite thin films with only minor deviations from a cubic symmetry. As a result, delicate variations of the structure with the composition of thin film perovskite-like solid solutions were studied.

© EDP Sciences 1999