J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-235 - Pr9-238
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-235-Pr9-238

DOI: 10.1051/jp4:1998945

Piezoelectric bimorph cantilever for actuating and sensing applications

P. Gaucher1, D. Eichner2, J. Hector1 and W. Von Munch2

1  Thomson CSF-LCR, Domaine de Corbeville, 91404 Orsay cedex, France
2  Institut für Halbleiter Technik, Universität Stuttgart, Germany

Back side bulk micromachining has been cornbined with front side ferroelectric technology for making a piezo-active microsystem including a sensor and an actuator on a silicon cantilever. Stress and thickness control of the thin (10µ) silicon beam are obtained by an original technology. The PZT piezoelectric rnaterial is deposited by the sol-gel spin coating technique. Due to the partial incompatibility of piezoelectric PZT capacitor with the methods of IC processing, a new processing route had to be found that is able to protect the sensitive area on the front side during back side micromachining. Additionally, a new method to pattern aluminum metallization in contact with platinum had to be developed to avoid electrochemical reactions in etching solutions. The beam can be sensed and actuated by the piezoelectric direct and (resp) converse effects. Sensor voltage response and actuator displacement are given up to the resonance frequency of 2.6 kHz. The device is planned to be used in a self regulated closed loop where the feedback electronics will be integrated on the chip.

© EDP Sciences 1998