J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-217 - Pr9-220
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-217-Pr9-220

DOI: 10.1051/jp4:1998941

Influence of layer interface parameters on dielectric characteristics of BSTO ferroelectric film planar capacitors

A.I. Dedyk1, S.F. Karmanenko1, S. Leppavuori2, V.I. Sakharov3, A.A. Semenov1, I.T. Serenkov3, L.T. Ter-Martirosyan1, A. Uusimak4 and F. Wang4

1  St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia
2  Microelectronics and Material Physics Laboratories, University of Oulu, 90570 Oulu, Finland
3  Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
4  Microelectronics and Material Physics Laboratones, University of Oulu, 90570 Oulu, Finland

Ferroelectric BaxSr1-xTiO3 (BSTO) films were prepared on sapphire (r-cut) and MgO substrates using two preparation processes- RF sputtering aid the sol-gel rnethod. The structure of the films and interfaces were investigated by middle energy ion back scattering combined with ion channelling. Planar capacitors patterned on the film allowed the temperature dependence of capacitance and voltage-capacitance characteristics (VCC) to be measured at a frequency of 1 MHz. The influence of some interface parameters (e.g. the presence of intermediate layers, structural ordering of the BSTO surface layer, the type of film electrode) on dielectric characteristics, VCC hysteresis and tunability of the planar capacitors are discussed.

© EDP Sciences 1998