J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-209 - Pr9-212
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-209-Pr9-212

DOI: 10.1051/jp4:1998939

Ferroelectric properties and polarization fatigue of Bi-modified Pb(Zr,Ti)O3 thin film

H.S. Lee and K.B. Lee

Department of Physics, Sangji University, Wonju, Kangwondo 220-702, Korea

Since many industrial applications of ferroelectric lead zirconium titanate [Pb(Zr,Ti)O3 ; PZT] thin films are limited due to the problem of degradation, in this paper, it was investigated ferroelectric fatigue properties of Bi-modified PZT, (Pb1-3/2xBix)(Zr0.52Ti0.48)O3 (PBZT), and PBZT/PZT/PBZT thin films deposited onto platinized silicon wafers by means of sol-gel method. Ferroelectricity, confirmed by P-E hysteresis characteristics, was found below x=0.25 in both films. It was shown that the formation of Bi-modified structure be independent of Bi content, although the Bi content strongly affect Pr and Ec. The values of both dielectric constant and remnant polarization decrease monotonically with increasing the Bi contents, but the rate of polarization fatigue slightly increases. However, both films show good crystallinity and well saturated hysteresis curve at x=0.05, which is related to the rate slope of polarization fatigue. This paper describes how the presence of Bi affects the fatigue characteristics of PBZT thin films. Fatigue behavior of PBZT/PZT/PBZT multilayer was improved as compared to that of PBZT thin film.

© EDP Sciences 1998