J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-151 - Pr9-154
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-151-Pr9-154

DOI: 10.1051/jp4:1998927

Sputtered ferroelectric PZT thin films in pyroelectric infrared sensors

P. Padmini1, R. Köhler1, G. Gerlach1, R. Bruchhaus2 and G. Hofmann3

1  TU Dresden, IFE, 01062 Dresden, Germany
2  Siemens AG, ZFET MR2, 81730 Munich, Germany
3  DIAS, Angewandte Sensorik GmbH, 01217 Dresden, Germany

PZT film of composition Pb(Zr0.25 Ti0.75)O3 deposited on TiO2/(111)Pt electrode is characterised by a strong (111) orientation. The self polarised films exhibit a pyroelectric coefficient of 2x10-4 Cm-2K-1, a dielectric constant, ε' of 300 and a dielectric loss, tan δ of 0.01. These material properties, including a low tensile stress of the sensor layer stack of +110 MPa, and compatibility with standard Si technology, makes these ferroelectric films suitable for use in pyroelectric sensor arrays. Fabricated single element sensors with radiation sensitive area of 1 mm2 exhibited at room temperature a specific detectivity of 3x108 cmHZ1/2 W-1. An 11x6 sensor array has been developed for motion detection. The array pixels with a sensitive area of 0.0784 mm2 have a NEP of less than 0.7 nW at 1 Hz.

© EDP Sciences 1998