J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-143 - Pr9-146
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-143-Pr9-146

DOI: 10.1051/jp4:1998925

Epitaxial growth and electrical properties of PCLT thin films for IR detector sensor

L. Zheng, A.M. Grishin and K.V. Rao

Department of Condensed Matter Physics, Royal Institute of Technology, 10044 Stockholm, Sweden

Highly c-axis oriented Pb0.8Ca0.1La0.1Ti0.975O/Y1Ba2Cu3O7-δ (PCLT/YBCO) bilayer films have been grown in situ on LaAlO3 substrates for the first time using Nd :YAG pulsed laser deposition technique. X-ray diffraction and rocking curve measurements suggest epitaxial growth of both YBCO and PCLT on LaAlO3 substrates. The film shows good ferroelectric properties (Pr = 28.5µC/cm2 and Ec = 145KV/cm) and exhibits a huge pyroelectric coefficient (γ=1.2x10-7) at room temperature. The figure of merit for voltage responsivity Fv is as high as 1.97x10-10C cm/J, and the figure of merit for specific detectivity Fd is as high as 2.22x10-8 C cm/J. These two parameters are almost twice as large as that of PLT10 and PLT15 films.

© EDP Sciences 1998