J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-45 - Pr9-48
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-45-Pr9-48

DOI: 10.1051/jp4:1998905

Ruthenium oxide electrodes prepared by sol-gel spin-coating

J.H. Yi, P. Thomas, M. Manier and J.P. Mercurio

Laboratoire de Matériaux Céramiques et Traitements de Surface, ESA 6015, Université de Limoges, Faculté des Sciences, 123 avenue Albert Thomas, 87060 Limoges cedex, France

Ruthenium oxide thin films were obtained by sol-gel spin-coating. The precursor solution was prepared by dissolving an aqueous solution of rutheniun nitrosyl nitrate Ru(NO)(NO3)3 into 2-methoxyethanol. Sols exhibiting appropriate viscosity were spin coated onto (100) Si wafers at 4000 rpm for 30 s following by drying at 300°C for 10 min, and repeated 5 ~ 15 times. The coated wafer was then fired at 400 ~ 800°C for 3 h in air. Crystallized homogeneous RuO2 films were obtained below 300°C, and further heating at higher temperature improves the crystallinity. The resistivity of the films regularly decreases from 270 to 200 µΩ as the film thickness increases from 150 nm (5 successive coatings) to 450 nm (15 successive coatings). In addition the resistivity remains almost constant up to 700°C. These RuO2 thin films are to be used as bottom electrodes for the sol-gel deposition of SrBi2Nb2O9 ferroelectric films.

© EDP Sciences 1998