Characterization method of the valence states : Application to dielectrics and metal-dielectrics interfaces

Abstract
Electron-induced x-ray emission spectroscopy (EXES) is an efficient technique to study the physicochemical properties of thin films and of buried interfaces. This method analyzes the distribution of the valence states, i.e. the states sensitive to the environment, in a selective way with the depth. The selectivity comes from the use of ionizing particles (electrons) gradually loosing their energy in the matter. Then the incident electron energy can be chosen in order to probe a given thickness of the material under study. Relation between chemical bond and atomic structure is discussed in the case of bare dielectrics (Al₂O₃ and MgO). Applications to buried metal-dielectric interfaces (AuPd/Al₂O₃ and Cu/MgO) are discussed as a function of mechanical properties.