J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature Electronics
Page(s) Pr3-289 - Pr3-292
Proceedings of the 3rd European Workshop on Low Temperature Electronics

J. Phys. IV France 08 (1998) Pr3-289-Pr3-292

DOI: 10.1051/jp4:1998364

Effects induced by electron beam irradiation on the properties of Y1Ba2Cu3O7-x biepitaxial Josephson junctions

F. Tafuri1, 2, B. Nadgorny3, 4, S. Shokhor3, M. Gurvitch3, F. Lombardi2, F. Carillo2 and A. Di Chiara2

1  Dipartimento di Ingegneria dell'Informazione, Seconda Università di Napoli, Aversa (CE), Italy
2  INFM, Dipartimento di Scienze Fisiche, Università di Napoli Federico II, Napoli, Italy
3  Department of Physics, State University of New York at Stony Brook, Stony Brook, New York 11794, U.S.A.
4  Naval Research Laboratory, Washington DC 20375, U.S.A.

The properties of the Y1Ba2Cu3O7-x biepitaxial Josephson junctions were reproducibly modified by a focused electron beam irradiation of the interface region. The original structures are based on 45° a-axis tilt grain boundaries. The junction parameters can be controllably adjusted by applying an appropriate irradiation dose. Electron irradiation reduced the critical current of the junctions and increased the normal state specific resistivity. The disappearance of the excess current and the shift of the voltage position of the Fiske steps were also observed. Isothermal annealing partly restores the original junction properties. Some aspects of the nature of the grain boundary barriers can be better understood from the study of the properties of irradiated junctions.

© EDP Sciences 1998